onsemi FGAF40S65AQ IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole

RS kodas: 185-7999Gamintojas: onsemiGamintojo kodas: FGAF40S65AQ
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

94 W

Pakuotės tipas

TO-3PF

Tvirtinimo tipas

Through Hole

Channel Type

N

Kaiščių skaičius

3

Transistor Configuration

Single

Matmenys

15.7 x 5.7 x 24.7mm

Energy Rating

325mJ

Minimali darbinė temperatūra

-55 °C

Gate Capacitance

2590pF

Maksimali darbinė temperatūra

+175 °C

Kilmės šalis

Korea, Republic Of

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€ 1,732

Each (In a Tube of 360) (be PVM)

€ 2,096

Each (In a Tube of 360) (su PVM)

onsemi FGAF40S65AQ IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole

360

Galima įsigyti kartotiną kiekį 360
360€ 623,70
720€ 1 247,40
1080€ 1 871,10
1440€ 2 494,80
1800€ 3 118,50
2160€ 3 742,20
2520€ 4 365,90
2880€ 4 989,60
3240€ 5 613,30
3600€ 6 237,00
3960€ 6 860,70
4320€ 7 484,40
4680€ 8 108,10
5040€ 8 731,80
5400€ 9 355,50
sticker-462

€ 1,732

Each (In a Tube of 360) (be PVM)

€ 2,096

Each (In a Tube of 360) (su PVM)

onsemi FGAF40S65AQ IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole
Sandėlio informacija laikinai nepasiekiama.

360

Galima įsigyti kartotiną kiekį 360
360€ 623,70
720€ 1 247,40
1080€ 1 871,10
1440€ 2 494,80
1800€ 3 118,50
2160€ 3 742,20
2520€ 4 365,90
2880€ 4 989,60
3240€ 5 613,30
3600€ 6 237,00
3960€ 6 860,70
4320€ 7 484,40
4680€ 8 108,10
5040€ 8 731,80
5400€ 9 355,50
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Maximum Continuous Collector Current

80 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

94 W

Pakuotės tipas

TO-3PF

Tvirtinimo tipas

Through Hole

Channel Type

N

Kaiščių skaičius

3

Transistor Configuration

Single

Matmenys

15.7 x 5.7 x 24.7mm

Energy Rating

325mJ

Minimali darbinė temperatūra

-55 °C

Gate Capacitance

2590pF

Maksimali darbinė temperatūra

+175 °C

Kilmės šalis

Korea, Republic Of

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more