Techniniai dokumentai
Specifikacijos
Markė
onsemiMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
75 W
Pakuotės tipas
TO-3PF
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Switching Speed
1MHz
Transistor Configuration
Single
Matmenys
15.7 x 3.2 x 26.7mm
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Patikrinkite dar kartą.
€ 2,468
Each (In a Tube of 30) (be PVM)
€ 2,986
Each (In a Tube of 30) (su PVM)
30
€ 2,468
Each (In a Tube of 30) (be PVM)
€ 2,986
Each (In a Tube of 30) (su PVM)
30
Techniniai dokumentai
Specifikacijos
Markė
onsemiMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
600 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
75 W
Pakuotės tipas
TO-3PF
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Switching Speed
1MHz
Transistor Configuration
Single
Matmenys
15.7 x 3.2 x 26.7mm
Maksimali darbinė temperatūra
+175 °C
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.