Techniniai dokumentai
Specifikacijos
Markė
onsemiMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
349 W
Pakuotės tipas
TO-3PN
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
16.2 x 5 x 20.1mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+175 °C
Produkto aprašymas
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 3,36
Each (In a Tube of 30) (be PVM)
€ 4,066
Each (In a Tube of 30) (su PVM)
30
€ 3,36
Each (In a Tube of 30) (be PVM)
€ 4,066
Each (In a Tube of 30) (su PVM)
30
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
30 - 30 | € 3,36 | € 100,80 |
60+ | € 3,15 | € 94,50 |
Techniniai dokumentai
Specifikacijos
Markė
onsemiMaximum Continuous Collector Current
40 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
349 W
Pakuotės tipas
TO-3PN
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
16.2 x 5 x 20.1mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+175 °C
Produkto aprašymas
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.