onsemi FGA15N120ANTDTU_F109 IGBT, 24 A 1200 V, 3-Pin TO-3PN, Through Hole
Techniniai dokumentai
Specifikacijos
Markė
onsemiMaximum Continuous Collector Current
24 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
TO-3PN
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
15.8 x 5 x 18.9mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
Malaysia
Produkto aprašymas
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 4,52
Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 5,47
Už kiekviena vnt. (tiekiama tuboje) (su PVM)
1
€ 4,52
Už kiekviena vnt. (tiekiama tuboje) (be PVM)
€ 5,47
Už kiekviena vnt. (tiekiama tuboje) (su PVM)
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiMaximum Continuous Collector Current
24 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Pakuotės tipas
TO-3PN
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
15.8 x 5 x 18.9mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Kilmės šalis
Malaysia
Produkto aprašymas
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products