P-Channel MOSFET, 65 A, 40 V, 8-Pin PQFN8 onsemi FDWS9509L-F085

RS kodas: 178-4235Gamintojas: onsemiGamintojo kodas: FDWS9509L-F085
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

PQFN8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±16 V

Typical Gate Charge @ Vgs

48 nC @ 10 V

Plotis

5.9mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

5.1mm

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.25V

Kilmės šalis

Philippines

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

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€ 0,889

Each (On a Reel of 3000) (be PVM)

€ 1,076

Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 65 A, 40 V, 8-Pin PQFN8 onsemi FDWS9509L-F085

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 2 668,05
6000€ 5 336,10
9000€ 8 004,15
12000€ 10 672,20
15000€ 13 340,25
18000€ 16 008,30
21000€ 18 676,35
24000€ 21 344,40
27000€ 24 012,45
30000€ 26 680,50
33000€ 29 348,55
36000€ 32 016,60
39000€ 34 684,65
42000€ 37 352,70
45000€ 40 020,75
sticker-462

€ 0,889

Each (On a Reel of 3000) (be PVM)

€ 1,076

Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 65 A, 40 V, 8-Pin PQFN8 onsemi FDWS9509L-F085
Sandėlio informacija laikinai nepasiekiama.

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 2 668,05
6000€ 5 336,10
9000€ 8 004,15
12000€ 10 672,20
15000€ 13 340,25
18000€ 16 008,30
21000€ 18 676,35
24000€ 21 344,40
27000€ 24 012,45
30000€ 26 680,50
33000€ 29 348,55
36000€ 32 016,60
39000€ 34 684,65
42000€ 37 352,70
45000€ 40 020,75
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

65 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

PQFN8

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

8 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

107 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±16 V

Typical Gate Charge @ Vgs

48 nC @ 10 V

Plotis

5.9mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

5.1mm

Aukštis

1.1mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.25V

Kilmės šalis

Philippines

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more