N-Channel MOSFET, 680 mA, 25 V, 3-Pin SOT-23 onsemi FDV303N
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
680 mA
Maximum Drain Source Voltage
25 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
+8 V
Plotis
1.3mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
2.92mm
Typical Gate Charge @ Vgs
1.64 nC @ 4.5 V
Aukštis
0.93mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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€ 0,128
Each (In a Pack of 100) (be PVM)
€ 0,155
Each (In a Pack of 100) (su PVM)
100
€ 0,128
Each (In a Pack of 100) (be PVM)
€ 0,155
Each (In a Pack of 100) (su PVM)
100
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Pakuotė |
|---|---|---|
| 100 - 400 | € 0,128 | € 12,81 |
| 500 - 900 | € 0,121 | € 12,08 |
| 1000 - 1900 | € 0,096 | € 9,56 |
| 2000 - 2900 | € 0,091 | € 9,14 |
| 3000+ | € 0,065 | € 6,51 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
680 mA
Maximum Drain Source Voltage
25 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
450 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.65V
Maximum Power Dissipation
350 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
+8 V
Plotis
1.3mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
2.92mm
Typical Gate Charge @ Vgs
1.64 nC @ 4.5 V
Aukštis
0.93mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products