N-Channel MOSFET, 2.8 A, 150 V, 3-Pin SOT-223 onsemi FDT86244
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
150 V
Serija
PowerTrench
Pakuotės tipas
SOT-223
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
237 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
6.7mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
3.7mm
Typical Gate Charge @ Vgs
4.9 nC @ 10 V
Aukštis
1.7mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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€ 0,378
Each (On a Reel of 4000) (be PVM)
€ 0,457
Each (On a Reel of 4000) (su PVM)
4000
€ 0,378
Each (On a Reel of 4000) (be PVM)
€ 0,457
Each (On a Reel of 4000) (su PVM)
4000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
2.8 A
Maximum Drain Source Voltage
150 V
Serija
PowerTrench
Pakuotės tipas
SOT-223
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
237 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
2.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Plotis
6.7mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Transistor Material
Si
Ilgis
3.7mm
Typical Gate Charge @ Vgs
4.9 nC @ 10 V
Aukštis
1.7mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products