Dual N-Channel MOSFET, 4.7 A, 80 V, 8-Pin SOIC onsemi FDS3890

RS kodas: 806-3630Gamintojas: onsemiGamintojo kodas: FDS3890
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

4.7 A

Maximum Drain Source Voltage

80 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.6 W, 2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+175 °C

Ilgis

4.9mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Plotis

3.9mm

Transistor Material

Si

Number of Elements per Chip

2

Aukštis

1.575mm

Serija

PowerTrench

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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€ 1,942

Each (In a Pack of 5) (be PVM)

€ 2,35

Each (In a Pack of 5) (su PVM)

Dual N-Channel MOSFET, 4.7 A, 80 V, 8-Pin SOIC onsemi FDS3890
Pasirinkite pakuotės tipą
sticker-462

€ 1,942

Each (In a Pack of 5) (be PVM)

€ 2,35

Each (In a Pack of 5) (su PVM)

Dual N-Channel MOSFET, 4.7 A, 80 V, 8-Pin SOIC onsemi FDS3890
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 5€ 1,942€ 9,71
10 - 95€ 1,575€ 7,88
100 - 245€ 1,26€ 6,30
250 - 495€ 1,26€ 6,30
500+€ 1,05€ 5,25

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

4.7 A

Maximum Drain Source Voltage

80 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

82 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.6 W, 2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+175 °C

Ilgis

4.9mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Plotis

3.9mm

Transistor Material

Si

Number of Elements per Chip

2

Aukštis

1.575mm

Serija

PowerTrench

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more