Dual N-Channel MOSFET, 30 A, 40 A, 25 V, 8-Pin Power 56 onsemi FDMS3602S

RS Stock No.: 759-9605Brand: onsemiManufacturers Part No.: FDMS3602S
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

30 A, 40 A

Maximum Drain Source Voltage

25 V

Package Type

Power 56

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.9 mΩ, 8.7 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.2 W, 2.5 W

Transistor Configuration

Series

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

19 nC @ 10 V, 45 nC @ 10 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Width

6mm

Transistor Material

Si

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Height

1.05mm

Product details

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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€ 1.05

€ 1.05 Each (Supplied as a Tape) (Exc. Vat)

€ 1.27

€ 1.27 Each (Supplied as a Tape) (inc. VAT)

Dual N-Channel MOSFET, 30 A, 40 A, 25 V, 8-Pin Power 56 onsemi FDMS3602S
Select packaging type
sticker-462

€ 1.05

€ 1.05 Each (Supplied as a Tape) (Exc. Vat)

€ 1.27

€ 1.27 Each (Supplied as a Tape) (inc. VAT)

Dual N-Channel MOSFET, 30 A, 40 A, 25 V, 8-Pin Power 56 onsemi FDMS3602S

Stock information temporarily unavailable.

Select packaging type
sticker-462

Stock information temporarily unavailable.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

30 A, 40 A

Maximum Drain Source Voltage

25 V

Package Type

Power 56

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

3.9 mΩ, 8.7 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.2 W, 2.5 W

Transistor Configuration

Series

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

19 nC @ 10 V, 45 nC @ 10 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Width

6mm

Transistor Material

Si

Series

PowerTrench

Minimum Operating Temperature

-55 °C

Height

1.05mm

Product details

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor

ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more