Dual N-Channel MOSFET, 2.7 A, 20 V, 6-Pin SOT-23 onsemi FDC6305N
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
SOT-23
Serija
PowerTrench
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
128 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
960 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
3.5 nC @ 4.5 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
3mm
Plotis
1.7mm
Transistor Material
Si
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Patikrinkite dar kartą.
€ 0,573
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,693
Už kiekviena vnt. (tiekiama riteje) (su PVM)
10
€ 0,573
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,693
Už kiekviena vnt. (tiekiama riteje) (su PVM)
10
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 10 - 90 | € 0,573 | € 5,73 |
| 100 - 490 | € 0,427 | € 4,27 |
| 500 - 990 | € 0,335 | € 3,35 |
| 1000 - 2990 | € 0,272 | € 2,72 |
| 3000+ | € 0,228 | € 2,28 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
2.7 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
SOT-23
Serija
PowerTrench
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
128 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
960 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-8 V, +8 V
Typical Gate Charge @ Vgs
3.5 nC @ 4.5 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
3mm
Plotis
1.7mm
Transistor Material
Si
Aukštis
1mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.
The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products