N-Channel MOSFET, 44 A, 650 V, 3-Pin TO-220F onsemi FCPF067N65S3
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
650 V
Pakuotės tipas
TO-220F
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
67 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Plotis
4.9mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.36mm
Typical Gate Charge @ Vgs
78 nC @ 10 V
Aukštis
16.07mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Kilmės šalis
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 4,62
Each (In a Tube of 1000) (be PVM)
€ 5,59
Each (In a Tube of 1000) (su PVM)
1000
€ 4,62
Each (In a Tube of 1000) (be PVM)
€ 5,59
Each (In a Tube of 1000) (su PVM)
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
650 V
Pakuotės tipas
TO-220F
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
67 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±30 V
Plotis
4.9mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
10.36mm
Typical Gate Charge @ Vgs
78 nC @ 10 V
Aukštis
16.07mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Kilmės šalis
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products