N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220 onsemi FCP165N65S3

RS kodas: 178-4243Gamintojas: onsemiGamintojo kodas: FCP165N65S3
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

154 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.67mm

Plotis

4.7mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Aukštis

16.3mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

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€ 1,995

Each (In a Tube of 50) (be PVM)

€ 2,414

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220 onsemi FCP165N65S3
sticker-462

€ 1,995

Each (In a Tube of 50) (be PVM)

€ 2,414

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 19 A, 650 V, 3-Pin TO-220 onsemi FCP165N65S3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

TO-220

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

154 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.67mm

Plotis

4.7mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Aukštis

16.3mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more