N-Channel MOSFET, 17 A, 650 V, 4-Pin Power88 onsemi FCMT180N65S3

RS kodas: 178-4240Gamintojas: onsemiGamintojo kodas: FCMT180N65S3
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

Power88

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

4

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

8mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Plotis

8mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

1.05mm

Kilmės šalis

Philippines

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€ 2,782

Each (On a Reel of 3000) (be PVM)

€ 3,366

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 17 A, 650 V, 4-Pin Power88 onsemi FCMT180N65S3
sticker-462

€ 2,782

Each (On a Reel of 3000) (be PVM)

€ 3,366

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 17 A, 650 V, 4-Pin Power88 onsemi FCMT180N65S3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

Power88

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

4

Maximum Drain Source Resistance

180 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

139 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

8mm

Typical Gate Charge @ Vgs

33 nC @ 10 V

Plotis

8mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Aukštis

1.05mm

Kilmės šalis

Philippines

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more