N-Channel MOSFET, 75 A, 650 V, 4-Pin TO-247-4 onsemi FCH023N65S3L4

RS kodas: 172-3421Gamintojas: onsemiGamintojo kodas: FCH023N65S3L4
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

TO-247-4

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

4

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

595 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Ilgis

15.8mm

Typical Gate Charge @ Vgs

222 nC @ 10 V

Plotis

5.2mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

22.74mm

Forward Diode Voltage

1.2V

Kilmės šalis

China

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€ 21,21

Each (In a Tube of 450) (be PVM)

€ 25,664

Each (In a Tube of 450) (su PVM)

N-Channel MOSFET, 75 A, 650 V, 4-Pin TO-247-4 onsemi FCH023N65S3L4
sticker-462

€ 21,21

Each (In a Tube of 450) (be PVM)

€ 25,664

Each (In a Tube of 450) (su PVM)

N-Channel MOSFET, 75 A, 650 V, 4-Pin TO-247-4 onsemi FCH023N65S3L4
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

75 A

Maximum Drain Source Voltage

650 V

Pakuotės tipas

TO-247-4

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

4

Maximum Drain Source Resistance

23 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

595 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Ilgis

15.8mm

Typical Gate Charge @ Vgs

222 nC @ 10 V

Plotis

5.2mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

22.74mm

Forward Diode Voltage

1.2V

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more