Dual N-Channel MOSFET, 25 A, 24 V Depletion, 10-Pin WLCSP ON Semiconductor EFC4K110NUZTDG
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
24 V
Pakuotės tipas
WLCSP
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
10
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1.3V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Dual
Maximum Gate Source Voltage
±12 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.23mm
Typical Gate Charge @ Vgs
49 nC @ 4.5 V nC
Plotis
2.13mm
Number of Elements per Chip
2
Aukštis
0.17mm
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€ 1,05
Each (On a Reel of 5000) (be PVM)
€ 1,27
Each (On a Reel of 5000) (su PVM)
5000
€ 1,05
Each (On a Reel of 5000) (be PVM)
€ 1,27
Each (On a Reel of 5000) (su PVM)
5000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
25 A
Maximum Drain Source Voltage
24 V
Pakuotės tipas
WLCSP
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
10
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1.3V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Dual
Maximum Gate Source Voltage
±12 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.23mm
Typical Gate Charge @ Vgs
49 nC @ 4.5 V nC
Plotis
2.13mm
Number of Elements per Chip
2
Aukštis
0.17mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products