Dual N-Channel MOSFET, 7 A, 30 V, 8-Pin ECH8, SOT-28FL onsemi ECH8659-TL-W

RS kodas: 145-5295Gamintojas: onsemiGamintojo kodas: ECH8659-TL-W
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

ECH8, SOT-28FL

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

2.3mm

Maksimali darbinė temperatūra

+150 °C

Number of Elements per Chip

2

Transistor Material

Si

Ilgis

2.9mm

Typical Gate Charge @ Vgs

11.8 nC @ 10 V

Aukštis

0.88mm

Forward Diode Voltage

1.2V

Kilmės šalis

China

Produkto aprašymas

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,244

Each (On a Reel of 3000) (be PVM)

€ 0,295

Each (On a Reel of 3000) (su PVM)

Dual N-Channel MOSFET, 7 A, 30 V, 8-Pin ECH8, SOT-28FL onsemi ECH8659-TL-W
sticker-462

€ 0,244

Each (On a Reel of 3000) (be PVM)

€ 0,295

Each (On a Reel of 3000) (su PVM)

Dual N-Channel MOSFET, 7 A, 30 V, 8-Pin ECH8, SOT-28FL onsemi ECH8659-TL-W
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

7 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

ECH8, SOT-28FL

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

55 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.6V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

2.3mm

Maksimali darbinė temperatūra

+150 °C

Number of Elements per Chip

2

Transistor Material

Si

Ilgis

2.9mm

Typical Gate Charge @ Vgs

11.8 nC @ 10 V

Aukštis

0.88mm

Forward Diode Voltage

1.2V

Kilmės šalis

China

Produkto aprašymas

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more