P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 onsemi BVSS84LT1G

RS kodas: 184-4197Gamintojas: onsemiGamintojo kodas: BVSS84LT1G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

130 mA

Maximum Drain Source Voltage

50 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

225 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Ilgis

3.04mm

Typical Gate Charge @ Vgs

2.2 nC @ 10 V

Plotis

1.4mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.01mm

Automotive Standard

AEC-Q101

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

2.2V

Kilmės šalis

China

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€ 0,089

Each (On a Reel of 3000) (be PVM)

€ 0,108

Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 onsemi BVSS84LT1G
sticker-462

€ 0,089

Each (On a Reel of 3000) (be PVM)

€ 0,108

Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 onsemi BVSS84LT1G
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
3000 - 6000€ 0,089€ 267,75
9000 - 42000€ 0,077€ 229,95
45000 - 96000€ 0,069€ 207,90
99000+€ 0,067€ 201,60

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

P

Maximum Continuous Drain Current

130 mA

Maximum Drain Source Voltage

50 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

0.9V

Maximum Power Dissipation

225 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Ilgis

3.04mm

Typical Gate Charge @ Vgs

2.2 nC @ 10 V

Plotis

1.4mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Aukštis

1.01mm

Automotive Standard

AEC-Q101

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

2.2V

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more