Techniniai dokumentai
Specifikacijos
Markė
onsemiTransistor Type
PNP
Maximum DC Collector Current
-1.5 A
Maximum Collector Emitter Voltage
-80 V
Pakuotės tipas
TO-126
Tvirtinimo tipas
Through Hole
Maximum Power Dissipation
12.5 W
Transistor Configuration
Single
Maximum Collector Base Voltage
-80 V
Maximum Emitter Base Voltage
-5 V
Kaiščių skaičius
3
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Matmenys
8 x 3.25 x 11mm
Produkto aprašymas
Power PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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Patikrinkite dar kartą.
€ 0,633
Each (In a Pack of 10) (be PVM)
€ 0,766
Each (In a Pack of 10) (su PVM)
Standartas
10
![sticker-462](https://cms.rsdelivers.com/repository-v1/nuolaida-7.gif)
€ 0,633
Each (In a Pack of 10) (be PVM)
€ 0,766
Each (In a Pack of 10) (su PVM)
Standartas
10
![sticker-462](https://cms.rsdelivers.com/repository-v1/nuolaida-7.gif)
Techniniai dokumentai
Specifikacijos
Markė
onsemiTransistor Type
PNP
Maximum DC Collector Current
-1.5 A
Maximum Collector Emitter Voltage
-80 V
Pakuotės tipas
TO-126
Tvirtinimo tipas
Through Hole
Maximum Power Dissipation
12.5 W
Transistor Configuration
Single
Maximum Collector Base Voltage
-80 V
Maximum Emitter Base Voltage
-5 V
Kaiščių skaičius
3
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Matmenys
8 x 3.25 x 11mm
Produkto aprašymas
Power PNP Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.