Techniniai dokumentai
Specifikacijos
Markė
onsemiTransistor Type
NPN
Maximum DC Collector Current
1.5 A
Maximum Collector Emitter Voltage
80 V
Pakuotės tipas
TO-126
Tvirtinimo tipas
Through Hole
Maximum Power Dissipation
12.5 W
Minimum DC Current Gain
63
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Kaiščių skaičius
3
Number of Elements per Chip
1
Matmenys
8.3 x 3.45 x 11.2mm
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
Small Signal NPN Transistors, 60V to 100V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,57
Each (In a Tube of 60) (be PVM)
€ 0,69
Each (In a Tube of 60) (su PVM)
60
€ 0,57
Each (In a Tube of 60) (be PVM)
€ 0,69
Each (In a Tube of 60) (su PVM)
60
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Vamzdelis |
---|---|---|
60 - 60 | € 0,57 | € 34,20 |
120 - 240 | € 0,537 | € 32,20 |
300+ | € 0,514 | € 30,84 |
Techniniai dokumentai
Specifikacijos
Markė
onsemiTransistor Type
NPN
Maximum DC Collector Current
1.5 A
Maximum Collector Emitter Voltage
80 V
Pakuotės tipas
TO-126
Tvirtinimo tipas
Through Hole
Maximum Power Dissipation
12.5 W
Minimum DC Current Gain
63
Transistor Configuration
Single
Maximum Collector Base Voltage
80 V
Maximum Emitter Base Voltage
5 V
Kaiščių skaičius
3
Number of Elements per Chip
1
Matmenys
8.3 x 3.45 x 11.2mm
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
Small Signal NPN Transistors, 60V to 100V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.