onsemi 2SK3666-2-TB-E N-Channel JFET, 30 V, Idss 0.6 to 1.5mA, 3-Pin SOT-23

RS kodas: 145-5192Gamintojas: onsemiGamintojo kodas: 2SK3666-2-TB-E
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

0.6 to 1.5mA

Maximum Drain Source Voltage

30 V

Maximum Drain Gate Voltage

-30V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

200 Ω

Tvirtinimo tipas

Surface Mount

Pakuotės tipas

SOT-23

Kaiščių skaičius

3

Matmenys

2.9 x 1.5 x 1.1mm

Aukštis

1.1mm

Plotis

1.5mm

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.9mm

Kilmės šalis

China

Produkto aprašymas

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,091

Each (On a Reel of 3000) (be PVM)

€ 0,11

Each (On a Reel of 3000) (su PVM)

onsemi 2SK3666-2-TB-E N-Channel JFET, 30 V, Idss 0.6 to 1.5mA, 3-Pin SOT-23

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 274,05
6000€ 548,10
9000€ 822,15
12000€ 1 096,20
15000€ 1 370,25
18000€ 1 644,30
21000€ 1 918,35
24000€ 2 192,40
27000€ 2 466,45
30000€ 2 740,50
33000€ 3 014,55
36000€ 3 288,60
39000€ 3 562,65
42000€ 3 836,70
45000€ 4 110,75
sticker-462

€ 0,091

Each (On a Reel of 3000) (be PVM)

€ 0,11

Each (On a Reel of 3000) (su PVM)

onsemi 2SK3666-2-TB-E N-Channel JFET, 30 V, Idss 0.6 to 1.5mA, 3-Pin SOT-23
Sandėlio informacija laikinai nepasiekiama.

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 274,05
6000€ 548,10
9000€ 822,15
12000€ 1 096,20
15000€ 1 370,25
18000€ 1 644,30
21000€ 1 918,35
24000€ 2 192,40
27000€ 2 466,45
30000€ 2 740,50
33000€ 3 014,55
36000€ 3 288,60
39000€ 3 562,65
42000€ 3 836,70
45000€ 4 110,75
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Idss Drain-Source Cut-off Current

0.6 to 1.5mA

Maximum Drain Source Voltage

30 V

Maximum Drain Gate Voltage

-30V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

200 Ω

Tvirtinimo tipas

Surface Mount

Pakuotės tipas

SOT-23

Kaiščių skaičius

3

Matmenys

2.9 x 1.5 x 1.1mm

Aukštis

1.1mm

Plotis

1.5mm

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.9mm

Kilmės šalis

China

Produkto aprašymas

N-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more