Techniniai dokumentai
Specifikacijos
Markė
onsemiTransistor Type
NPN
Maximum DC Collector Current
17 A
Maximum Collector Emitter Voltage
250 V
Pakuotės tipas
TO-264
Tvirtinimo tipas
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
80
Transistor Configuration
Single
Maximum Collector Base Voltage
250 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Kaiščių skaičius
3
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Matmenys
20 x 5 x 26mm
Produkto aprašymas
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
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Patikrinkite dar kartą.
€ 5,25
Each (In a Pack of 5) (be PVM)
€ 6,352
Each (In a Pack of 5) (su PVM)
5
€ 5,25
Each (In a Pack of 5) (be PVM)
€ 6,352
Each (In a Pack of 5) (su PVM)
5
Techniniai dokumentai
Specifikacijos
Markė
onsemiTransistor Type
NPN
Maximum DC Collector Current
17 A
Maximum Collector Emitter Voltage
250 V
Pakuotės tipas
TO-264
Tvirtinimo tipas
Through Hole
Maximum Power Dissipation
150 W
Minimum DC Current Gain
80
Transistor Configuration
Single
Maximum Collector Base Voltage
250 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
30 MHz
Kaiščių skaičius
3
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Matmenys
20 x 5 x 26mm
Produkto aprašymas
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.