N-Channel MOSFET, 260 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002ETG

RS kodas: 124-9944Gamintojas: onsemiGamintojo kodas: 2N7002ET
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

260 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Ilgis

2.9mm

Typical Gate Charge @ Vgs

0.81 nC @ 5 V

Plotis

1.3mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Aukštis

0.94mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Czech Republic

Produkto aprašymas

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,03

Each (On a Reel of 3000) (be PVM)

€ 0,036

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 260 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002ETG
sticker-462

€ 0,03

Each (On a Reel of 3000) (be PVM)

€ 0,036

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 260 mA, 60 V, 3-Pin SOT-23 onsemi 2N7002ETG
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
3000 - 3000€ 0,03€ 91,35
6000 - 12000€ 0,03€ 91,35
15000 - 27000€ 0,028€ 85,05
30000 - 57000€ 0,028€ 85,05
60000+€ 0,027€ 81,90

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

260 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Ilgis

2.9mm

Typical Gate Charge @ Vgs

0.81 nC @ 5 V

Plotis

1.3mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Aukštis

0.94mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Czech Republic

Produkto aprašymas

N-Channel Power MOSFET, 60V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more