Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
400 V
Maximum Gate Emitter Voltage
±4V
Pakuotės tipas
ECH
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
8
Switching Speed
1MHz
Transistor Configuration
Single
Matmenys
2.9 x 2.3 x 0.9mm
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Patikrinkite dar kartą.
€ 0,237
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,287
Už kiekviena vnt. (tiekiama riteje) (su PVM)
10
€ 0,237
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,287
Už kiekviena vnt. (tiekiama riteje) (su PVM)
10
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
400 V
Maximum Gate Emitter Voltage
±4V
Pakuotės tipas
ECH
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
8
Switching Speed
1MHz
Transistor Configuration
Single
Matmenys
2.9 x 2.3 x 0.9mm
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.