onsemi TIG065E8-TL-H IGBT, 150 A 400 V, 8-Pin ECH, Surface Mount
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
400 V
Maximum Gate Emitter Voltage
±4V
Pakuotės tipas
ECH
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
8
Switching Speed
1MHz
Transistor Configuration
Single
Matmenys
2.9 x 2.3 x 0.9mm
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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Patikrinkite dar kartą.
€ 0,237
Už kiekviena vnt. (tiekiama juostoje) (be PVM)
€ 0,287
Už kiekviena vnt. (tiekiama juostoje) (su PVM)
10
€ 0,237
Už kiekviena vnt. (tiekiama juostoje) (be PVM)
€ 0,287
Už kiekviena vnt. (tiekiama juostoje) (su PVM)
10
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorMaximum Continuous Collector Current
150 A
Maximum Collector Emitter Voltage
400 V
Maximum Gate Emitter Voltage
±4V
Pakuotės tipas
ECH
Tvirtinimo tipas
Surface Mount
Channel Type
N
Kaiščių skaičius
8
Switching Speed
1MHz
Transistor Configuration
Single
Matmenys
2.9 x 2.3 x 0.9mm
Maksimali darbinė temperatūra
+150 °C
Produkto aprašymas
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products