Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOT-883
Kaiščių skaičius
3
Drain Gate On-Capacitance
4pF
Source Gate On-Capacitance
4pF
Matmenys
1.08 x 0.68 x 0.41mm
Maximum Power Dissipation
100 mW
Maksimali darbinė temperatūra
+150 °C
Ilgis
1.08mm
Aukštis
0.41mm
Plotis
0.68mm
Produkto aprašymas
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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€ 0,217
Each (In a Pack of 50) (be PVM)
€ 0,263
Each (In a Pack of 50) (su PVM)
50
€ 0,217
Each (In a Pack of 50) (be PVM)
€ 0,263
Each (In a Pack of 50) (su PVM)
50
Pirkti dideliais kiekiais
kiekis | Vieneto kaina | Per Pakuotė |
---|---|---|
50 - 200 | € 0,217 | € 10,87 |
250 - 950 | € 0,104 | € 5,20 |
1000 - 2450 | € 0,085 | € 4,25 |
2500+ | € 0,084 | € 4,20 |
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Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
1.2 to 3mA
Maximum Drain Source Voltage
30 V
Maximum Drain Gate Voltage
-30V
Transistor Configuration
Single
Configuration
Single
Tvirtinimo tipas
Surface Mount
Pakuotės tipas
SOT-883
Kaiščių skaičius
3
Drain Gate On-Capacitance
4pF
Source Gate On-Capacitance
4pF
Matmenys
1.08 x 0.68 x 0.41mm
Maximum Power Dissipation
100 mW
Maksimali darbinė temperatūra
+150 °C
Ilgis
1.08mm
Aukštis
0.41mm
Plotis
0.68mm
Produkto aprašymas
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.