Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
123 A
Maximum Drain Source Voltage
80 V
Pakuotės tipas
DFN
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
5
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Plotis
5.1mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
6.1mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Aukštis
1.05mm
Serija
NVMFS6H818N
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 1,05
Each (In a Pack of 10) (be PVM)
€ 1,27
Each (In a Pack of 10) (su PVM)
10
€ 1,05
Each (In a Pack of 10) (be PVM)
€ 1,27
Each (In a Pack of 10) (su PVM)
10
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Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
123 A
Maximum Drain Source Voltage
80 V
Pakuotės tipas
DFN
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
5
Maximum Drain Source Resistance
3.7 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
136 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Plotis
5.1mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
6.1mm
Typical Gate Charge @ Vgs
46 nC @ 10 V
Aukštis
1.05mm
Serija
NVMFS6H818N
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Automotive Standard
AEC-Q101