Dual N-Channel MOSFET, 34 A, 40 V, 8-Pin DFN onsemi NVMFD5853NLG

RS kodas: 163-0303Gamintojas: ON SemiconductorGamintojo kodas: NVMFD5853NLT1G
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

34 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

DFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

24 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

6.1mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Plotis

5.1mm

Number of Elements per Chip

2

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Malaysia

Produkto aprašymas

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,196

Each (On a Reel of 1500) (be PVM)

€ 0,237

Each (On a Reel of 1500) (su PVM)

Dual N-Channel MOSFET, 34 A, 40 V, 8-Pin DFN onsemi NVMFD5853NLG
sticker-462

€ 0,196

Each (On a Reel of 1500) (be PVM)

€ 0,237

Each (On a Reel of 1500) (su PVM)

Dual N-Channel MOSFET, 34 A, 40 V, 8-Pin DFN onsemi NVMFD5853NLG
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

34 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

DFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

15 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

24 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

6.1mm

Typical Gate Charge @ Vgs

23 nC @ 10 V

Plotis

5.1mm

Number of Elements per Chip

2

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Malaysia

Produkto aprašymas

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more