Dual N-Channel MOSFET, 310 mA, 60 V, 6-Pin SOT-563 onsemi NTZD5110NG

RS kodas: 163-1146Gamintojas: ON SemiconductorGamintojo kodas: NTZD5110NT1G
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

310 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-563

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

280 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-6 V, +6 V

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

1.7mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Plotis

1.3mm

Minimali darbinė temperatūra

-55 °C

Aukštis

0.6mm

Kilmės šalis

Malaysia

Produkto aprašymas

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,08

Each (On a Reel of 4000) (be PVM)

€ 0,097

Each (On a Reel of 4000) (su PVM)

Dual N-Channel MOSFET, 310 mA, 60 V, 6-Pin SOT-563 onsemi NTZD5110NG
sticker-462

€ 0,08

Each (On a Reel of 4000) (be PVM)

€ 0,097

Each (On a Reel of 4000) (su PVM)

Dual N-Channel MOSFET, 310 mA, 60 V, 6-Pin SOT-563 onsemi NTZD5110NG
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

310 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-563

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

280 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-6 V, +6 V

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

1.7mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Plotis

1.3mm

Minimali darbinė temperatūra

-55 °C

Aukštis

0.6mm

Kilmės šalis

Malaysia

Produkto aprašymas

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more