Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
80 V
Pakuotės tipas
WDFN
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Plotis
3.15mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
3.15mm
Typical Gate Charge @ Vgs
3.6 nC @ 10 V
Aukštis
0.75mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Kilmės šalis
Malaysia
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 1,013
Each (On a Reel of 1500) (be PVM)
€ 1,226
Each (On a Reel of 1500) (su PVM)
1500
€ 1,013
Each (On a Reel of 1500) (be PVM)
€ 1,226
Each (On a Reel of 1500) (su PVM)
1500
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Techniniai dokumentai
Specifikacijos
Markė
onsemiChannel Type
N
Maximum Continuous Drain Current
68 A
Maximum Drain Source Voltage
80 V
Pakuotės tipas
WDFN
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
9.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
107 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Plotis
3.15mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Ilgis
3.15mm
Typical Gate Charge @ Vgs
3.6 nC @ 10 V
Aukštis
0.75mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Kilmės šalis
Malaysia