N-Channel MOSFET, 270 mA, 30 V, 3-Pin SOT-323 onsemi NTS4001NG

RS kodas: 780-4764Gamintojas: ON SemiconductorGamintojo kodas: NTS4001NT1G
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

270 mA

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-323 (SC-70)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

330 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.2mm

Typical Gate Charge @ Vgs

0.9 nC @ 5 V

Plotis

1.35mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

0.9mm

Produkto aprašymas

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,039

Each (In a Pack of 50) (be PVM)

€ 0,047

Each (In a Pack of 50) (su PVM)

N-Channel MOSFET, 270 mA, 30 V, 3-Pin SOT-323 onsemi NTS4001NG
Pasirinkite pakuotės tipą
sticker-462

€ 0,039

Each (In a Pack of 50) (be PVM)

€ 0,047

Each (In a Pack of 50) (su PVM)

N-Channel MOSFET, 270 mA, 30 V, 3-Pin SOT-323 onsemi NTS4001NG
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

270 mA

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOT-323 (SC-70)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

330 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.2mm

Typical Gate Charge @ Vgs

0.9 nC @ 5 V

Plotis

1.35mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

0.9mm

Produkto aprašymas

N-Channel Power MOSFET, 30V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more