P-Channel MOSFET Transistor, 3.7 A, 8 V, 3-Pin SOT-23 onsemi NTR2101PG

RS kodas: 780-4739Gamintojas: ON SemiconductorGamintojo kodas: NTR2101PT1G
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Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

3.7 A

Maximum Drain Source Voltage

8 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

960 mW

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.04mm

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Plotis

1.4mm

Minimali darbinė temperatūra

-55 °C

Aukštis

1.01mm

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onsemi P-Channel MOSFET, 3.7 A, 8 V, 3-Pin SOT-23 NTR2101PT1G
€ 0,227Už kiekviena vnt. (tiekiama juostoje) (be PVM)

P.O.A.

Each (In a Pack of 25) (be PVM)

P-Channel MOSFET Transistor, 3.7 A, 8 V, 3-Pin SOT-23 onsemi NTR2101PG
Pasirinkite pakuotės tipą
sticker-462

P.O.A.

Each (In a Pack of 25) (be PVM)

P-Channel MOSFET Transistor, 3.7 A, 8 V, 3-Pin SOT-23 onsemi NTR2101PG

Sandėlio informacija laikinai nepasiekiama.

Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
onsemi P-Channel MOSFET, 3.7 A, 8 V, 3-Pin SOT-23 NTR2101PT1G
€ 0,227Už kiekviena vnt. (tiekiama juostoje) (be PVM)

Techniniai dokumentai

Specifikacijos

Channel Type

P

Maximum Continuous Drain Current

3.7 A

Maximum Drain Source Voltage

8 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

960 mW

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.04mm

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Plotis

1.4mm

Minimali darbinė temperatūra

-55 °C

Aukštis

1.01mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
onsemi P-Channel MOSFET, 3.7 A, 8 V, 3-Pin SOT-23 NTR2101PT1G
€ 0,227Už kiekviena vnt. (tiekiama juostoje) (be PVM)