Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
210 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
DFN
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
5
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Plotis
5.1mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.1mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Aukštis
1.1mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,525
Each (In a Pack of 5) (be PVM)
€ 0,635
Each (In a Pack of 5) (su PVM)
5
€ 0,525
Each (In a Pack of 5) (be PVM)
€ 0,635
Each (In a Pack of 5) (su PVM)
5
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Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
210 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
DFN
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
5
Maximum Drain Source Resistance
2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
110 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Plotis
5.1mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.1mm
Typical Gate Charge @ Vgs
75 nC @ 10 V
Aukštis
1.1mm
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V