Dual N-Channel MOSFET, 26 A, 60 V, 8-Pin DFN onsemi NTMFD5C680NLT1G

RS kodas: 178-4315Gamintojas: onsemiGamintojo kodas: NTMFD5C680NLT1G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

26 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

19 W

Maximum Gate Source Voltage

±20 V

Plotis

6.1mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+175 °C

Ilgis

5.1mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

Malaysia

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€ 0,891

Each (On a Reel of 1500) (be PVM)

€ 1,078

Each (On a Reel of 1500) (su PVM)

Dual N-Channel MOSFET, 26 A, 60 V, 8-Pin DFN onsemi NTMFD5C680NLT1G
sticker-462

€ 0,891

Each (On a Reel of 1500) (be PVM)

€ 1,078

Each (On a Reel of 1500) (su PVM)

Dual N-Channel MOSFET, 26 A, 60 V, 8-Pin DFN onsemi NTMFD5C680NLT1G
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Ritė
1500 - 3000€ 0,891€ 1 337,18
4500 - 7500€ 0,864€ 1 296,22
9000+€ 0,824€ 1 236,38

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

26 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

28 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

19 W

Maximum Gate Source Voltage

±20 V

Plotis

6.1mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+175 °C

Ilgis

5.1mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more