Dual N-Channel MOSFET, 42 A, 60 V, 8-Pin DFN onsemi NTMFD5C674NLT1G

RS kodas: 178-4314Gamintojas: onsemiGamintojo kodas: NTMFD5C674NLT1G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

42 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

14.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

37 W

Maximum Gate Source Voltage

±20 V

Plotis

6.1mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+175 °C

Ilgis

5.1mm

Typical Gate Charge @ Vgs

4.7 nC @ 4.5 V

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

Malaysia

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€ 1,785

Each (On a Reel of 1500) (be PVM)

€ 2,16

Each (On a Reel of 1500) (su PVM)

Dual N-Channel MOSFET, 42 A, 60 V, 8-Pin DFN onsemi NTMFD5C674NLT1G
sticker-462

€ 1,785

Each (On a Reel of 1500) (be PVM)

€ 2,16

Each (On a Reel of 1500) (su PVM)

Dual N-Channel MOSFET, 42 A, 60 V, 8-Pin DFN onsemi NTMFD5C674NLT1G
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

42 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

14.4 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

37 W

Maximum Gate Source Voltage

±20 V

Plotis

6.1mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+175 °C

Ilgis

5.1mm

Typical Gate Charge @ Vgs

4.7 nC @ 4.5 V

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more