Dual N-Channel MOSFET, 145 A, 40 V, 8-Pin DFN onsemi NTMFD5C446NLT1G

RS kodas: 178-4312Gamintojas: onsemiGamintojo kodas: NTMFD5C446NLT1G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

145 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

DFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

2.65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

125 W

Maximum Gate Source Voltage

±20 V

Maksimali darbinė temperatūra

+175 °C

Ilgis

5.1mm

Typical Gate Charge @ Vgs

25 nC @ 4.5 V

Plotis

6.1mm

Number of Elements per Chip

2

Forward Diode Voltage

0.8V

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Malaysia

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€ 1,522

Each (On a Reel of 1500) (be PVM)

€ 1,842

Each (On a Reel of 1500) (su PVM)

Dual N-Channel MOSFET, 145 A, 40 V, 8-Pin DFN onsemi NTMFD5C446NLT1G
sticker-462

€ 1,522

Each (On a Reel of 1500) (be PVM)

€ 1,842

Each (On a Reel of 1500) (su PVM)

Dual N-Channel MOSFET, 145 A, 40 V, 8-Pin DFN onsemi NTMFD5C446NLT1G
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

145 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

DFN

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

2.65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

125 W

Maximum Gate Source Voltage

±20 V

Maksimali darbinė temperatūra

+175 °C

Ilgis

5.1mm

Typical Gate Charge @ Vgs

25 nC @ 4.5 V

Plotis

6.1mm

Number of Elements per Chip

2

Forward Diode Voltage

0.8V

Aukštis

1.05mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more