Dual N-Channel MOSFET, 6.5 A, 20 V, 8-Pin SOIC onsemi NTMD6N02G

RS kodas: 805-4525Gamintojas: ON SemiconductorGamintojo kodas: NTMD6N02R2G
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

49 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Plotis

4mm

Transistor Material

Si

Number of Elements per Chip

2

Aukštis

1.5mm

Minimali darbinė temperatūra

-55 °C

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€ 0,527

Each (In a Pack of 25) (be PVM)

€ 0,638

Each (In a Pack of 25) (su PVM)

Dual N-Channel MOSFET, 6.5 A, 20 V, 8-Pin SOIC onsemi NTMD6N02G
sticker-462

€ 0,527

Each (In a Pack of 25) (be PVM)

€ 0,638

Each (In a Pack of 25) (su PVM)

Dual N-Channel MOSFET, 6.5 A, 20 V, 8-Pin SOIC onsemi NTMD6N02G
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
25 - 25€ 0,527€ 13,18
50 - 225€ 0,433€ 10,82
250 - 475€ 0,352€ 8,79
500 - 975€ 0,306€ 7,64
1000+€ 0,274€ 6,85

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

6.5 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

49 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Typical Gate Charge @ Vgs

12 nC @ 4.5 V

Plotis

4mm

Transistor Material

Si

Number of Elements per Chip

2

Aukštis

1.5mm

Minimali darbinė temperatūra

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more