N-Channel MOSFET, 7.5 A, 30 V, 8-Pin SOIC ON Semiconductor NTMD4840NR2G

RS kodas: 163-1127Gamintojas: ON SemiconductorGamintojo kodas: NTMD4840NR2G
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

36 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

1.95 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

4mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

5mm

Typical Gate Charge @ Vgs

4.8 nC @ 4.5 V

Aukštis

1.5mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Philippines

Produkto aprašymas

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,285

Each (On a Reel of 2500) (be PVM)

€ 0,345

Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 7.5 A, 30 V, 8-Pin SOIC ON Semiconductor NTMD4840NR2G
sticker-462

€ 0,285

Each (On a Reel of 2500) (be PVM)

€ 0,345

Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 7.5 A, 30 V, 8-Pin SOIC ON Semiconductor NTMD4840NR2G
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

7.5 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

36 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Maximum Power Dissipation

1.95 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

4mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

5mm

Typical Gate Charge @ Vgs

4.8 nC @ 4.5 V

Aukštis

1.5mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

Philippines

Produkto aprašymas

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more