Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 onsemi NTJD5121NG

RS kodas: 178-7611Gamintojas: onsemiGamintojo kodas: NTJD5121NT1G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-363

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

266 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

1.35mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

2.2mm

Typical Gate Charge @ Vgs

0.9 nC @ 4.5 V

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,039

Each (On a Reel of 3000) (be PVM)

€ 0,047

Each (On a Reel of 3000) (su PVM)

Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 onsemi NTJD5121NG
sticker-462

€ 0,039

Each (On a Reel of 3000) (be PVM)

€ 0,047

Each (On a Reel of 3000) (su PVM)

Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 onsemi NTJD5121NG
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-363

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

2.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

266 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

1.35mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

2.2mm

Typical Gate Charge @ Vgs

0.9 nC @ 4.5 V

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

Dual N-Channel MOSFET, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more