Dual N/P-Channel MOSFET, 1.1 A, 910 mA, 8 V, 20 V, 6-Pin SOT-363 ON Semiconductor NTJD4105CT1G
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorChannel Type
N, P
Maximum Continuous Drain Current
1.1 A, 910 mA
Maximum Drain Source Voltage
8 V, 20 V
Pakuotės tipas
SOT-363 (SC-88)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
445 mΩ, 900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
550 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, -8 V, +12 V, +8 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.2mm
Typical Gate Charge @ Vgs
1.3 nC @ 4.5 V, 2.2 nC @ 4.5 V
Plotis
1.35mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Produkto aprašymas
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,034
Each (In a Pack of 25) (be PVM)
€ 0,041
Each (In a Pack of 25) (su PVM)
25
€ 0,034
Each (In a Pack of 25) (be PVM)
€ 0,041
Each (In a Pack of 25) (su PVM)
25
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorChannel Type
N, P
Maximum Continuous Drain Current
1.1 A, 910 mA
Maximum Drain Source Voltage
8 V, 20 V
Pakuotės tipas
SOT-363 (SC-88)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
445 mΩ, 900 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
550 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-12 V, -8 V, +12 V, +8 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
2.2mm
Typical Gate Charge @ Vgs
1.3 nC @ 4.5 V, 2.2 nC @ 4.5 V
Plotis
1.35mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Produkto aprašymas
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products