N-Channel MOSFET, 91 A, 60 V, 3-Pin DPAK onsemi NTD5C648NLT4G

RS kodas: 178-4311Gamintojas: onsemiGamintojo kodas: NTD5C648NLT4G
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Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

91 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

4.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

76 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

6.22mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

6.73mm

Typical Gate Charge @ Vgs

17 nC @ 4.5

Aukštis

2.25mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

Vietnam

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€ 2,31

Each (On a Reel of 2500) (be PVM)

€ 2,795

Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 91 A, 60 V, 3-Pin DPAK onsemi NTD5C648NLT4G
sticker-462

€ 2,31

Each (On a Reel of 2500) (be PVM)

€ 2,795

Each (On a Reel of 2500) (su PVM)

N-Channel MOSFET, 91 A, 60 V, 3-Pin DPAK onsemi NTD5C648NLT4G
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

onsemi

Channel Type

N

Maximum Continuous Drain Current

91 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

4.1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

76 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

6.22mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

6.73mm

Typical Gate Charge @ Vgs

17 nC @ 4.5

Aukštis

2.25mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Kilmės šalis

Vietnam

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more