N-Channel MOSFET, 43 A, 60 V, 3-Pin DPAK onsemi NTD5865NT4G

RS kodas: 719-2904Gamintojas: ON SemiconductorGamintojo kodas: NTD5865NT4G
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

43 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

23 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.73mm

Plotis

6.22mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

2.38mm

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€ 0,843

Each (In a Pack of 5) (be PVM)

€ 1,02

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 43 A, 60 V, 3-Pin DPAK onsemi NTD5865NT4G
sticker-462

€ 0,843

Each (In a Pack of 5) (be PVM)

€ 1,02

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 43 A, 60 V, 3-Pin DPAK onsemi NTD5865NT4G
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 5€ 0,843€ 4,22
10 - 15€ 0,423€ 2,12
20 - 45€ 0,404€ 2,02
50 - 95€ 0,387€ 1,94
100+€ 0,265€ 1,32

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

43 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

23 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.73mm

Plotis

6.22mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

2.38mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more