N-Channel MOSFET, 58 A, 100 V, 3-Pin D2PAK onsemi NTB6412ANG

RS kodas: 719-2850Gamintojas: ON SemiconductorGamintojo kodas: NTB6412ANG
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

58 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

18.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

167 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

13.5 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.29mm

Plotis

9.65mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

4.83mm

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€ 1,785

Each (In a Pack of 2) (be PVM)

€ 2,16

Each (In a Pack of 2) (su PVM)

N-Channel MOSFET, 58 A, 100 V, 3-Pin D2PAK onsemi NTB6412ANG
sticker-462

€ 1,785

Each (In a Pack of 2) (be PVM)

€ 2,16

Each (In a Pack of 2) (su PVM)

N-Channel MOSFET, 58 A, 100 V, 3-Pin D2PAK onsemi NTB6412ANG
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
2 - 18€ 1,785€ 3,57
20 - 38€ 1,155€ 2,31
40 - 98€ 1,155€ 2,31
100 - 498€ 1,155€ 2,31
500+€ 1,102€ 2,20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

58 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

18.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

167 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

13.5 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.29mm

Plotis

9.65mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

4.83mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more