onsemi NGTB40N120IHLWG IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
260 W
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
16.26 x 5.3 x 21.08mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
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P.O.A.
1
P.O.A.
1
Ideate. Create. Collaborate
JOIN FOR FREE
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Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
260 W
Pakuotės tipas
TO-247
Tvirtinimo tipas
Through Hole
Channel Type
N
Kaiščių skaičius
3
Transistor Configuration
Single
Matmenys
16.26 x 5.3 x 21.08mm
Minimali darbinė temperatūra
-55 °C
Maksimali darbinė temperatūra
+150 °C
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products