onsemi NGTB10N60R2DT4G IGBT, 20 A 600 V, 3-Pin DPAK (TO-252), Surface Mount

RS kodas: 882-9809PGamintojas: ON SemiconductorGamintojo kodas: NGTB10N60R2DT4G
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Techniniai dokumentai

Specifikacijos

Maximum Continuous Collector Current

20 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

72 W

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Channel Type

N

Kaiščių skaičius

3

Switching Speed

1MHz

Transistor Configuration

Single

Matmenys

6.73 x 6.22 x 2.38mm

Gate Capacitance

1340pF

Maksimali darbinė temperatūra

+175 °C

Produkto aprašymas

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,446

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,54

Už kiekviena vnt. (tiekiama riteje) (su PVM)

onsemi NGTB10N60R2DT4G IGBT, 20 A 600 V, 3-Pin DPAK (TO-252), Surface Mount
Pasirinkite pakuotės tipą
sticker-462

€ 0,446

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,54

Už kiekviena vnt. (tiekiama riteje) (su PVM)

onsemi NGTB10N60R2DT4G IGBT, 20 A 600 V, 3-Pin DPAK (TO-252), Surface Mount
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

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Techniniai dokumentai

Specifikacijos

Maximum Continuous Collector Current

20 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

72 W

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Channel Type

N

Kaiščių skaičius

3

Switching Speed

1MHz

Transistor Configuration

Single

Matmenys

6.73 x 6.22 x 2.38mm

Gate Capacitance

1340pF

Maksimali darbinė temperatūra

+175 °C

Produkto aprašymas

IGBT Discretes, ON Semiconductor

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.

IGBT Discretes, ON Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.