Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
5.9 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOT-223
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3 + Tab
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.7mm
Typical Gate Charge @ Vgs
29 nC @ 10 V
Plotis
3.7mm
Transistor Material
Si
Minimali darbinė temperatūra
-65 °C
Aukštis
1.7mm
Produkto aprašymas
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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Patikrinkite dar kartą.
€ 1,575
Each (In a Pack of 5) (be PVM)
€ 1,906
Each (In a Pack of 5) (su PVM)
5
€ 1,575
Each (In a Pack of 5) (be PVM)
€ 1,906
Each (In a Pack of 5) (su PVM)
5
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorChannel Type
P
Maximum Continuous Drain Current
5.9 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOT-223
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3 + Tab
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.7mm
Typical Gate Charge @ Vgs
29 nC @ 10 V
Plotis
3.7mm
Transistor Material
Si
Minimali darbinė temperatūra
-65 °C
Aukštis
1.7mm
Produkto aprašymas
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semis proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.