N-Channel MOSFET, 5.5 A, 500 V, 3-Pin TO-220FP onsemi NDF05N50ZG

RS kodas: 719-2816Gamintojas: ON SemiconductorGamintojo kodas: NDF05N50ZG
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

500 V

Pakuotės tipas

TO-220FP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

117 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

18.5 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.63mm

Plotis

4.9mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

16.12mm

Produkto aprašymas

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

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€ 0,392

Each (In a Pack of 5) (be PVM)

€ 0,474

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 5.5 A, 500 V, 3-Pin TO-220FP onsemi NDF05N50ZG
Pasirinkite pakuotės tipą
sticker-462

€ 0,392

Each (In a Pack of 5) (be PVM)

€ 0,474

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 5.5 A, 500 V, 3-Pin TO-220FP onsemi NDF05N50ZG
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

5.5 A

Maximum Drain Source Voltage

500 V

Pakuotės tipas

TO-220FP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

117 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

18.5 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.63mm

Plotis

4.9mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

16.12mm

Produkto aprašymas

N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor

MOSFET Transistors, ON Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more