N-Channel MOSFET, 3 A, 500 V, 3-Pin DPAK onsemi NDD04N50ZT4G
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
500 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
2.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
61 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
12 nC @ 10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.73mm
Plotis
6.22mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
2.38mm
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P.O.A.
5
P.O.A.
5
Ideate. Create. Collaborate
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Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
3 A
Maximum Drain Source Voltage
500 V
Pakuotės tipas
DPAK (TO-252)
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
2.7 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
61 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
12 nC @ 10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.73mm
Plotis
6.22mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
2.38mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products