N-Channel MOSFET, 3 A, 600 V, 3-Pin DPAK onsemi NDD03N60ZT4G

RS kodas: 719-2796Gamintojas: ON SemiconductorGamintojo kodas: NDD03N60ZT4G
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

600 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

3.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

78 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+30 V

Typical Gate Charge @ Vgs

12 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.73mm

Plotis

6.22mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

2.38mm

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€ 1,037

Each (In a Pack of 5) (be PVM)

€ 1,255

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 3 A, 600 V, 3-Pin DPAK onsemi NDD03N60ZT4G
Pasirinkite pakuotės tipą
sticker-462

€ 1,037

Each (In a Pack of 5) (be PVM)

€ 1,255

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 3 A, 600 V, 3-Pin DPAK onsemi NDD03N60ZT4G
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 45€ 1,037€ 5,19
50 - 120€ 0,571€ 2,86
125 - 245€ 0,388€ 1,94
250 - 495€ 0,349€ 1,74
500+€ 0,311€ 1,55

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

600 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

3.6 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

78 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+30 V

Typical Gate Charge @ Vgs

12 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.73mm

Plotis

6.22mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

2.38mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more