N-Channel MOSFET, 2.6 A, 500 V, 3-Pin IPAK onsemi NDD03N50Z-1G

RS kodas: 719-2780Gamintojas: ON SemiconductorGamintojo kodas: NDD03N50Z-1G
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

500 V

Pakuotės tipas

IPAK (TO-251)

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

3.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

58 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.73mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Plotis

2.38mm

Transistor Material

Si

Aukštis

7.62mm

Minimali darbinė temperatūra

-55 °C

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€ 0,761

Each (In a Pack of 5) (be PVM)

€ 0,921

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 2.6 A, 500 V, 3-Pin IPAK onsemi NDD03N50Z-1G
sticker-462

€ 0,761

Each (In a Pack of 5) (be PVM)

€ 0,921

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 2.6 A, 500 V, 3-Pin IPAK onsemi NDD03N50Z-1G
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 45€ 0,761€ 3,81
50 - 120€ 0,388€ 1,94
125 - 245€ 0,271€ 1,35
250 - 495€ 0,269€ 1,34
500+€ 0,266€ 1,33

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

500 V

Pakuotės tipas

IPAK (TO-251)

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

3.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Maximum Power Dissipation

58 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.73mm

Typical Gate Charge @ Vgs

10 nC @ 10 V

Plotis

2.38mm

Transistor Material

Si

Aukštis

7.62mm

Minimali darbinė temperatūra

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more