N-Channel MOSFET, 2.4 A, 600 V, 3-Pin IPAK onsemi NDD02N60Z-1G
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
2.4 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
IPAK (TO-251)
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
4.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Typical Gate Charge @ Vgs
10 nC @ 10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.73mm
Plotis
2.38mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
7.62mm
Produkto aprašymas
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,10
Each (In a Pack of 5) (be PVM)
€ 0,121
Each (In a Pack of 5) (su PVM)
5
€ 0,10
Each (In a Pack of 5) (be PVM)
€ 0,121
Each (In a Pack of 5) (su PVM)
5
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
2.4 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
IPAK (TO-251)
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
4.8 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Maximum Power Dissipation
57 W
Transistor Configuration
Single
Maximum Gate Source Voltage
+30 V
Typical Gate Charge @ Vgs
10 nC @ 10 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
6.73mm
Plotis
2.38mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
7.62mm
Produkto aprašymas
N-Channel Power MOSFET, 100V to 1700V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products